technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com npn low power silicon transistor qualified per mil-prf-19500/301 t4-lds-0010 rev. 3 (101342) page 1 of 4 devices levels 2n918 2n918ub jan jantx jantxv absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit collector-emitter voltage v ceo 15 vdc collector-base voltage v cbo 30 vdc emitter-base voltage v ebo 3.0 vdc collector current i c 50 madc total power dissipation @ t a = +25c (1) p t 200 mw operating & storage junction temperature range t op & t stg -65 to +200 c note: 1) derate linearly 1.14mw/c above t a > 25c electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics collector-emitter breakdown voltage i c = 3madc v (br)ceo 15 vdc collector-base cutoff current v cb = 30vdc v cb = 25vdc v cb = 25vdc; t a = +150c i cbo 1.0 10 1.0 adc adc adc emitter-base cutoff current v eb = 3.0vdc v eb = 2.5vdc i ebo 10 10 adc adc forward-current transfer ratio i c = 0.5madc, v ce = 10vdc i c = 3.0madc, v ce = 1.0vdc i c = 10madc, v ce = 10vdc i c = 3.0madc, v ce = 1.0vdc; t a = -55c h fe 10 20 20 10 200 collector-emitter saturation voltage i c = 10madc, i b = 1.0madc v ce(sat) 0.4 vdc base-emitter voltage i c = 10madc, i b = 1.0madc v be(sat) 1.0 vdc to-72 2n918 3 pin 2n918ub
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0010 rev. 3 (101342) page 2 of 4 dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of small-signal short-circu it - forward curren t transfer ratio i c = 4madc, v ce = 10vdc, f = 100mhz |h fe | 6.0 18 output capacitance v cb = 0vdc, i e = 0, 100khz f 1.0mhz v cb = 10vdc, i e = 0, 100khz f 1.0mhz c obo1 c obo2 3.0 1.7 pf input capacitance v eb = 0.5vdc, i c = 0, 100khz f 1.0mhz c ibo 2.0 pf noise figure (1) v ce = 6v, i c = 1.0ma, f = 60mhz g s = 2.5mmho nf 6.0 db small-signal power gain (1) v cb = 12v, i c = 6.0ma, f = 200mhz g pe 15 db collector-base time constant (1) v cb = 10v, i e = -4.0ma, f = 79.8mhz r b?cc 25 ps oscillator power output (1) v cb = 1.5v, i c = 8.0ma, f 500mhz p o 30 mw collector efficiency v cb = 15v, i c = 8.0ma, f > 500mhz n 25 % notes: (1) for more detail see mil-prf-19500/301
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0010 rev. 3 (101342) page 3 of 4 package dimensions notes: 1. dimension are in inches. 2. millimeters are given for general information only. 3. beyond r (radius) maximum, th shall be held for a minimum length of .011 inch (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 -.000 inch (1.37 +0.025 -0.00 mm) below seating plane shall be within .007 inch (0.18mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. 7. dimension lu applies between l1 and l2. dimension ld applies between l2 and ll minimum. diameter is uncontrolled in l1 and beyond ll minimum. 8. all four leads. 9. dimension r (radius) applies to both inside corners of tab. 10. in accordance with asme y14.5m , diameters are equivalent to x symbology. 11. lead 1 = emitter, lead 2 = base, lead 3 = co llector, lead 4 = case (electrically connected). figure 1. physical dimensions for 2n918 (to-72). symbol dimensions inches millimeters note min max min max cd .178 .195 4.52 4.95 5 ch .170 .210 4.32 5.33 hd .209 .230 5.31 5.84 5 lc .100 tp 2.54 tp 7,8 ld .016 .021 .406 .533 7,8 ll .500 .750 12.70 19.05 7,8 lu .016 .019 .406 .483 l1 .050 1 .27 l2 .250 6.35 p .100 2.54 q .040 1.02 5 tl .028 .048 .71 1.22 tw .036 .046 .91 1.17 r .007 .18 45 tp
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0010 rev. 3 (101342) page 4 of 4 package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. hatched areas on package denote metallized areas. 4. lid material: kovar. 5. pad 1 = base, pad 2 = emitter, pad 3 = collector, pad 4 = shielding connected to the lid. 6. in accordance with asme y14.5m , diameters are equivalent to x symbology. figure 2. physical dimensions for 2n918ub, surface mount. symbol dimensions dimensions inches millimeters note symbol inches millimeters note min max min max min max min max bh .046 .056 1.17 1.42 ls 1 .036 .040 0.91 1.02 bl .115 .128 2.92 3.25 ls 2 .071 .079 1.80 2.01 bw .085 .108 2.16 2.74 lw .016 .024 0.41 0.61 cl .128 3.25 r .008 .203 cw .108 2.74 r1 .012 .305 ll 1 .022 .038 0.56 0.97 r2 .022 .559 ll 2 .017 .035 0.4. 0.89
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